Abstract
Undoped and In-doped ZnSe and ZnS-ZnSe SL films were prepared on GaAs (100) substrate by hot wall epitaxy and their photoluminescence was measured at temperatures ranging from 4.2 to 300 K. It was found that the photoluminescence associated with the band edge and with the D(In)-A pair shifted with temperature in a similar way to that of the band gap of the bulk. Photoluminescence associated with deep level defects is discussed in relation to strain and shallow levels. Moreover ZnS-ZnSe SLs with various thickness of ZnS layer (barrier layer) were prepared and the photon energies of their PL were analysed using the Kronig-Penney model to discuss band offsets Δ E c and Δ E v.
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