Abstract
AbstractWe have carried out temperature‐dependent studies of the photoluminescence properties of a set of CdSe/ZnSe quantum dot structures grown on conventionally used GaAs(100) substrates and Si(100)/Ge virtual substrates. Both single‐layer and multilayer QD structures have been studied. It was shown that the conventional MBE technique allows to grow CdSe/ZnSe QDs having the activation energy of luminescence quenching as large as 200 meV. Such issues as possible reasons of such a large activation energy and exciton migration in QD planes are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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