Temperature dependence of photoluminescence intensity of self-assembled CdTe quantum dots in the ZnTe matrix under different excitation conditions

Abstract

The temperature dependence of the integrated photoluminescence intensity of nanometer-sized ZnTe/CdTe/ZnTe quantum wells has been investigated under different excitation conditions. It has been shown that the character of thermal decay of the luminescence intensity depends on the frequency of the exciting light and, under the above-barrier excitation, strongly depends on the optical excitation power density. It has been found that an increase in the excitation intensity leads to a saturation of thermal quenching of the luminescence in the low-temperature range. The conclusion has been drawn that this behavior reflects the saturation of nonradiative recombination centers with photoexcited carriers.