Abstract

AbstractHigh quality P‐doped Zn1‐xMgx Te crystals with Mg composition x of 0.09 to 0.3 were grown by vertical Bridgman method. The typical value of the full width at half maximum of (004) X‐ray ricking curve was 65.7 arcsec. For the first time temperature dependence of photoluminescence measurement were successfully attained by using the P‐doped Zn1‐xMgx Te crystals. All the crystals showed not only excitonic emission with no donor‐acceptor pair emission at low temperature but also photoluminescence (PL) band originated from interband transition at room temperature. From the temperature dependent PL intensity of free‐to‐bound (FB) transition emission, the relationship between x and the energy of P acceptor level was estimated by the use of one‐step model of thermal quenching mechanism. The result showed that the acceptor level monotonically increases with increasing x. This relationship seems to be reasonable which was supported by comparison with the energy difference between the peak of FB emission and estimated band gap at 4.2 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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