Abstract
AlGaAs structures with different aluminum concentration (x=0.0, 0.17, 0.30, and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34, 194 (1967)], L. Viña et al. [Phys. Rev. B 30, 1979 (1984)], and R. Pässler [Phys. Status Solidi B 200, 155 (1997)] models were used to fit the experimental points. The Pässler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.
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