Temperature dependence of optical gain in compressively strained InAsP/GaInAs based quantum well heterostructure for short wavelength infrared applications

Abstract

This paper reports temperature results on InAs0.8P0.2/Ga0.3In0.7As/InP quantum well heterostructure with a type-II band alignment that causes electron and hole to have spatially separated wavefunction. Theoretical simulations of the band structure and wavefunctions are conducted using the k.p method with the Luttinger-Kohn 6 × 6 Hamiltonian. In addition, the energy dispersion curve, momentum matrix element, and optical gain are also calculated. Our results show that the proposed heterostructure is promising for fabricating 1.84 μm (short wavelength infrared region-SWIR) lasers at room temperature. The effect of an increase in temperature on energy gap, optical gain, and transition wavelength is observed. Redshift is realized as the temperature rises from 100 K to 500 K.