Abstract
We theoretically investigate the optical bistability in superconductor–semiconductor photonic crystals composed of graphene. The photonic crystals are symmetric to the center and arranged alternately by the superconductor (HgBa2Ca2Cu3O8+δ) and semiconductor (GaAs) layers. The system supports a defect mode, and graphene is located at the layer interface where the local electric field is the strongest. Consequently, the optical nonlinearity of graphene has been greatly enhanced, and low-threshold optical bistability can be achieved with an incident wavelength red-detuning to the defect mode. The upper and lower thresholds of bistability increase with the increase in the value of low environmental temperature, while the interval between the upper and lower thresholds decreases. This research has a potential application in temperature-controlled optical switches and temperature-controlled optical memory.
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