Temperature dependence of magnetoresistance of amorphous Fe80−xVxB14Si6

Abstract

Abstract Amorphous Fe 80− x V x B 14 Si 6 with 0 ⩽ x ⩽ 16 have been made by the quench spinning method. We have measured the electrical resistivity ϱ 0 , ferromagnetic anisotropy resistivity (FAR), Δ ϱ / ϱ 0 , and transverse force magnetoresistance (TFM) (∂ ϱ /∂H) ⊥ from 300 K to 10 K. For x ⩾ 4, T in is observed for each ϱ 0 versus T plot. ϱ 0 ( T ) is fitted to a T 1 2 dependence and to a ln T dependence respectively, to see which is better for T T min . The anomalous behavior in resistivity does not seem to affect the temperature dependence of FAR. At 10 K, both magnetization and FAR are decreasing functions of x . As x is increased, TFM changes from a negative value to a positive value.