Abstract
It is reported that the temperature dependence of integrated luminescence intensity in Al x Ga 1- x As and Cd 1- x Mn x Te obeys 1/(1+ A exp ( T/ T 0)). By analogy with the discussions of temperature dependence of luminescence in amorphous materials, we presume that a mobility edge and localized tail states exist at the edge of amalgamation bands of mixed crystals. The tail states below their edge become narrower at larger x (0.4⪖ x⪖0.1 in the present study). The same dependence is observed for the luminescence from magnetic polarons bound to potential fluctuations (BM).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.