Abstract

It is reported that the temperature dependence of integrated luminescence intensity in Al x Ga 1- x As and Cd 1- x Mn x Te obeys 1/(1+ A exp ( T/ T 0)). By analogy with the discussions of temperature dependence of luminescence in amorphous materials, we presume that a mobility edge and localized tail states exist at the edge of amalgamation bands of mixed crystals. The tail states below their edge become narrower at larger x (0.4⪖ x⪖0.1 in the present study). The same dependence is observed for the luminescence from magnetic polarons bound to potential fluctuations (BM).

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.