Abstract
The temperature dependence of an InGaN dual-junction solar cell has been investigated. At different temperatures ranging from 300 K to 450 K, the In0.49Ga0.51N/In0.74Ga0.26N dual-junction solar cell and its subcells were simulated and their electrical parameters calculated. The variation of the temperature coefficient of each electrical parameter of the simulated solar cell with temperature was investigated too. Under normalized conditions (AM1.5G, 0.1 W/cm2, 300 K), the temperature coefficient of the short-circuit current density, open-circuit voltage, and conversion efficiency of the In0.49Ga0.51N/In0.74Ga0.26N dual-junction solar cell was +0.0037%/K, −0.1936%/K, and −0.266%/K, respectively. These results demonstrate that InGaN is a promising material for use in dual-junction solar cells for operation at high temperature.
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