Abstract
The temperature dependence of the saturation drift velocity of holes in p-GaAs has been experimentally determined. The material used was grown epitaxially and had a low field mobility μ≈400 cm2/V sec and carrier concentration p0≈1×1016/cm3, both at T=300°K. The saturation velocity was 1.0×107 cm/sec at T=300°K, and decreased to 7×106 cm/sec at T=469°K. The temperature dependence of the low-field mobility was also measured and was found to be in good agreement with the recent theory of Wiley and DiDomenico.
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