Abstract
Results are given of measurements of the temperature dependence of electrical conductivity, Hall constant, and Hall mobility of holes in Te thin films. Two series of samples with different thicknesses, prepared at two condensation rates, 1.21 and 8.60 nm/s, are measured. The temperature courses of bulk values of the hole mobility which satisfy the conception concerning the scattering of holes by barriers on grain boundaries, where the mean distance of these barriers is larger than the mean free path of holes in crystallites, are obtained by evaluating the results according to Petritz' model. It appears that the barrier height is dependent on film density. [Russian Text Ignored]
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