Abstract
In summary, we have presented the experimental results for characterizing the temperature dependence of Ge/Si SACM APDs. The dark current increases by a factor 2 every 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ο</sup> C at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bias</sub> = -15V. Due to the temperature dependence of the ionization rate, the gain G increases by around 1.3 times for a temperature reduction of ΔT=10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ο</sup> C. The measured GBP is over 400GHz and The GBP is not sensitive to the temperature change ranging from 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ο</sup> C to 60°C.
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