Abstract
AbstractGaN MOS capacitors on both as‐grown and dry/wet‐etched GaN surfaces are characterized by C‐V and G‐ω measurements at elevated temperatures. The nature of GaN/SiO2 interface traps are determined in detail by extracting interface trap density, surface potential fluctuation, trap time constant and capture cross‐section. When temperature increases, trap time constant decreases so that more traps become active and contribute to observed higher interface trap density, especially for traps at deeper energy levels. The deeper trap levels activated at higher temperatures also induce corresponding temperature‐dependent surface potential fluctuation variations. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
