Temperature dependence of galvanomagnetic properties for Er-doped and undoped n-type InSe

Abstract

The magnetoresistance and the Hall-effect measurements in undoped n-InSe (InSe) and Er-doped InSe (InSe:Er) samples in the temperature range 10–340 K were carried out. The InSe sample and the InSe:Er sample exhibit a null transverse magnetoresistance effect for T≳160 and T≳140 K, respectively, and a zero longitudinal magnetoresistance effect for T≳160 and T≳100 K, respectively. As the temperature increases, the carrier concentration obtained from the Hall-effect measurements in the InSe sample increases up to 40 K, decreases in the range 40–100 K, and increases for T≳100 K, although the carrier concentration in the InSe:Er sample increases up to 300 K. In the same samples, the Hall mobility of the InSe sample increases up to 80 K and obeys to μH∝T−1.86 for T≳80 K, although the Hall mobility of the InSe:Er sample decreases up to 340 K and obeys to μH∝T−1.51 for T≳80 K. The electrical conductivity, which is proportional to a product of the Hall mobility and the carrier concentration, of the InSe sample and the InSe:Er sample decreases with increasing temperature for T≳60 and T≳100 K, respectively.