Abstract
Fluorine-doped tin oxide (FTO) films were prepared at different substrate temperatures by ultrasonic spray pyrolysis technique on glass substrates. Among F-doped tin oxide films, the lowest resistivitiy was found to be 6.2 × 10 − 4 Ω-cm for a doping percentage of 50 mol% of fluorine in 0.5 M solution, deposited at 400 °C. Hall coefficient analyses and secondary ion mass spectrometry (SIMS) measured the electron carrier concentration that varies from 3.52 × 10 20 cm − 3 to 6.21 × 10 20 cm − 3 with increasing fluorine content from 4.6 × 10 20 cm − 3 to 7.2 × 10 20 cm − 3 in FTO films deposited on various temperatures. Deposition temperature on FTO films has been optimized for achieving a minimum resistivity and maximum optical transmittance.
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