Abstract
Temperature dependence of the field emission characteristics is investigated for the phosphorus(P)-doped polycrystalline diamond film in comparison with that of the boron(B)-doped one. The threshold voltage decreases with increasing temperature for the P-doped diamond film, while no variation in the threshold voltage occurs for the B-doped diamond film. It is considered that an increase of the ionized donor concentration with increasing temperature leads to a reduction in the tunnel barrier width at the interface between the diamond and the cathode, resulting in an enhancement of the emission current. Field emission characteristics in the higher voltage region are featured by the space charge limited current. The activation energy estimated from the Arrhenius plot of the emission current suggests the upward band bending at the diamond surface.
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