Abstract
AbstractRadiative recombination processes in CuInSe2 (CIS) single crystals grown by the vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm2. Study of the quenching parameters of the A and B free‐ and first three bound‐excitons (M1, M2 and M3) in high‐quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound‐excitons. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
