Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Abstract

High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on (001)-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E1s(T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E1s(T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E1s(T) data sets for cubic ZnS, are discussed.