Abstract
Temperature dependence of ESR in a silicon crystal containing 1.3×1017 phosphorus atoms/cm3 has been investigated at 4–40 K. The ESR signals depend strongly on the specimen temperature. Typical hyperfine structures of the phosphorus ground state were found in the low-temperature region. The hyperfine lines vanished at 20 K and a single line corresponding to the first excited state of phosphorus was observed in the high-temperature region. The amplitudes of the hyperfine lines and the single line show sharp maxima at 11 K and 30 K, respectively. The change of the signal amplitudes is due to the temperature dependence of spin relaxation time. The change of the linewidth for the hyperfine lines can be explained by the temperature dependence of spin relaxation time, and that for the single line is considered to be caused by motional narrowing.
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