Temperature dependence of electron-spin coherence in intrinsic bulk GaAs

Abstract

Temperature dependence of electron-spin coherence dynamics is investigated for an intrinsic bulk GaAs in the Voigt geometry using the elliptically polarized absorption quantum-beat spectroscopy. Temperature dependences of spin coherence and recombination lifetimes as well as g factor of electrons are reported over a temperature range from 8.1to260K. The temperature dependence of spin coherence lifetime (T2*) agrees well with a reported theoretical calculation and can be fitted well by a relationship T2*∼T−1∕2, which provides an evidence to support electron-spin decoherence dominated by the Bir-Aronov-Pikus mechanism. The temperature dependence of g factor also agrees well with reported results.