Temperature dependence of electrical properties of n- and p-type 3C-SiC

Abstract

Electrical properties of unintentionally doped n-type and Al-doped p-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures between 10 and 1000 K. Activation energies of Al acceptors and residual donors obtained from the temperature dependence of carrier density are 160 and 18 meV, respectively. 40%–60% of Al acceptors in the p-type epilayers are compensated, and hole mobility is limited by acoustic phonon scattering above 300 K and by ionized impurity scattering below 250 K.