Temperature Dependence of Electrical Characteristics of ZnO Nanowire Field-Effect Transistors with AZO and Aluminium Source/Drain Contact

Abstract

In this study, ZnO nanowire field-effect transistor (FET) with an aluminium-doped ZnO (AZO) and an aluminium (Al) dual layer source and drain contact are fabricated and temperature dependent characteristics in the range of 200 – 300 K are analyzed through experimental measurements. The effect of temperature on threshold voltage, subthreshold slope, transconductance, and field effect mobility are analysed. The transfer curve exhibits a parallel shift toward a negative gate voltage direction with a negative shift of the threshold voltage, an increase in the subthreshold slope, and a field-effect mobility as the temperature rises. The electrical properties of the transistors demonstrate typical behaviour at various temperatures.