Temperature Dependence of dV/dt Impact on the SiC-MOSFET

Abstract

Recentlly, high speed switching circuits using SiC power device have been developed for reduction of switching loss and downsizing of electric products. The high speed switching leads to the rapid changing of the drain voltage (dV/dt) during the switching period. This paper reports the effects of the dV/dt impact on the self-turn-on and the characteristics of SiC-MOSFET, especially the temperature dependence. The results shows that the gate bias voltage to suppress the self-turn-on is negatively correlated with the temperature. And it is also found that the dV/dt impact breaks down the gate source insulation and the dV/dt value to the breakdown is positively correlated with the temperature.