Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs

Abstract

The hysteresis characteristics of the drain current (ID) in FD-SOI n-MOSFETs are examined at different back gate voltage and temperature. The relationship between the hysteresis and the temperature is discussed in comparison with the result for PD-SOI n-MOSFETs, taking into account the back gate interface states. The ID hysteresis, which is defined as the difference of ID for VFG swept up and down, showed positive and negative peaks. The ID hysteresis peak height decreases with increasing temperature. Higher influence of the back interface states on the ID hysteresis for FD-SOI is observed than for PD-SOI by the comparison of the activation energies for decreasing ID hysteresis.