Abstract
The current–voltage ( I–V) characteristics of Sn/p-Si Schottky barrier diode have been measured over a wide range of temperature (80–300 K) and interpreted on the basis of thermionic emission mechanism by merging the concept of barrier inhomogeneities through a Gaussian distribution function. The analysis has revealed an anomalous decrease of apparent barrier height Φ b0, increase of ideality factor n, and nonlinearity of the activation energy plot at lower temperatures. A Φ b0 versus 1/ T plot has been drawn to obtain evidence of a Gaussian distribution of barrier heights, and values of 0.97 eV and 0.084 V for the mean barrier height Φ ¯ b 0 and standard deviation σ 0 have been obtained, respectively, from this plot. A modified ln( I 0 /T 2)−( q 2 σ 0 2/2 k 2 T 2) versus 1/ T plot gives Φ ¯ b 0 and Richardson constant A** as 0.95 eV and 15.6 A cm −2 K −2, respectively. It can be concluded that the temperature dependent I–V characteristics of the Sn/p-Si Schottky barrier diode can be successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights. We have also discussed whether or not the junction current has been connected with thermionic field-emission mechanism.
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