Abstract
This study investigates the growth of MgGa2O4 films using oxygen radicals-assisted pulsed laser deposition (PLD). By changing the substrate temperature from 100 to 500 °C, the structural and optical properties of the films was explored. X-ray diffraction analysis demonstrates that (111) oriented MgGa2O4 films can achieve enhanced crystalline quality by using oxygen radicals compared to films deposited by conventional PLD without plasma. At room temperature transmittance spectra exhibit high transmittance levels across the infrared, visible, and UV regions, with direct bandgaps of approximately 5.4 eV for all deposited samples. These findings underscore the efficacy of oxygen radicals-assisted PLD for the deposition of high-quality MgGa2O4 films at low temperature, thereby expanding the potential applications in advanced electronic and optoelectronic devices compatible with established Si-based integrated circuits.
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