Abstract

Nanocrystallisation of Fe75Cu1Nb3Si8B13 under tensile stress results in a creep induced anisotropy which, at room temperature, is characterised by a magnetic easy axis along the stress axis. However, this magnetic easy ribbon axis becomes a magnetic hard ribbon axis when the measuring temperature T decreases below a compensation temperature T0 where the creep induced magnetic anisotropy vanishes. Accordingly, the magnetisation curve changes from a square loop for T > T0 to a linear loop with low remanence forT < T0. In the present case (8 at% Si), T0 is about −2 °C for the fully developed nanocrystalline state. Although slightly depending on the annealing conditions, T0 is primarily determined by the Si content and shifts towards higher temperatures by about 50 °C per at% Si with increasing Si concentration.

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