Temperature dependence of conduction mechanism of ZnO and Co-doped ZnO thin films

Abstract

ZnO and Co-doped ZnO thin films have been deposited on the sapphire substrate by ultrasonic assisted chemical vapor deposition technique. The films were annealed in vacuum at 450 °C. All the films were highly c-axis orientated and contained no impurity phase. The temperature dependence of the electrical conductivity has been measured in order to identify the dominant conduction mechanism. In the higher temperature region the dominance of thermally activated band conduction was observed whereas in the low temperature region the hopping conduction was found to dominate. The hopping conduction mechanism in the lower temperature range in the film was Mott's Variable Range Hopping and not the Nearest Neighbor Hopping. The temperature region, where hopping conduction was dominant found to increase by Co doping in ZnO film. The localization length was found to be larger in the Co-doped ZnO film.