Abstract
The resistivity, Hall coefficient and magnetoresistance of thin bismuth films were measured at various temperatures (80–300 K) and thicknesses (0.1–3 μm). The mobilities and concentrations of the free electrons and holes were calculated from the experimental data using an anisotropic two-carrier model. Four approaches to the calculation were applied and the results were compared with one another. It was found that the electron and hole concentrations are approximately equal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
