Temperature Dependence of Collapse of Quantized Hall Resistance

Abstract

Similarity is observed in the deviation of Hall resistance from the quantized value with the increase in the source–drain current I SD in our butterfly-type Hall bars and in the Hall bars used by Jeanneret et al. [IEEE Trans. Instrum. Meas. 44 (1995) 254], while changes in the diagonal resistivity ρ x x with I SD are significantly different between these Hall bars. The temperature dependence of the critical Hall electric field F cr ( T ) for the collapse of R H (4) measured in these Hall bars is approximated using F cr ( T )= F cr (0)(1-( T / T cr ) 2 ). Here, the critical Hall electric field at zero temperature depends on the magnetic field B as F cr (0)∝ B 3/2 . Theoretical considerations are given on F cr ( T ) on the basis of a temperature-dependent mobility edge model and a schema of temperature-dependent inter-Landau level tunneling probability arising from the Fermi distribution function. The former does not fit in with the I SD dependence of activation energy in ρ x x .