Abstract
Si epitaxial growth on a 1 monolayer (ML) boron-adsorbed Si(111) surface was studied. Reflection high-energy electron diffraction (RHEED) intensity oscillations revealed that when the substrate temperature was below 600°C, layer-by-layer growth with 4 ML high two-dimensional (2D) islands occuurred as long as the surface segregated boron was more than 1 3 ML. On the other hand, layer-by-layer growth with normal 2 ML high 2D islands occurred at 600°C even though the surface segregated boron was more than 1 3 ML. This result also indicates that the surface segregated boron suppresses the Si surface migration.
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