Abstract

We used molecular beam epitaxy to deposit a novel ferro-/antiferromagnet (Fe/KCoF3) system on gallium terminated GaAs (100) substrates. We varied the thicknesses of single crystal Fe (001) layers from 1.05 to 3 nm. The antiferromagnetic fluoride, with a thickness of 30 nm, was deposited either in a single-crystal or a polycrystalline form, depending on the deposition conditions. KCoF3 is an antiferromagnet with a Néel temperature of 114 K. Its cubic structure almost perfectly matches the Fe film structure. The growth was monitored by reflection high energy electro diffraction. The magnetic properties of the system were studied using ferromagnetic resonance. Uniaxial and unidirectional anisotropy fields, due to exchange bias, were measured at low temperatures in the field-cooled samples and were smaller than 45 and 72 Oe, respectively. Both anisotropy fields, unidirectional and uniaxial, decreased with increasing thickness of the Fe film or with increases in temperature. The temperature dependence of the fourfold anisotropy was studied for the samples with different thicknesses of Fe films and different crystalline states of the fluoride layer. Room temperature values of the fourfold anisotropy also increased with increasing thickness of the Fe layer and were in a fairly good agreement with previously reported values for single crystal Fe films. Also, the temperature characteristics of the fourfold anisotropy for the structures with single crystal fluoride seemed to reproduce low-temperature literature data for Fe (001) films. In contrast, the structures with polycrystalline KCoF3 demonstrated a significant enhancement of the fourfold anisotropy at low temperatures. For the thinnest sample (tFe=1.05 nm) the low temperature anisotropy is more than tripled compared to room temperature values. It is believed that the surface effects can be responsible for this enhancement.

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