Abstract

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave incorrect values for both the low temperature half-width and the temperature dependence of this half-width. In re-evaluating these quantities, two of three previously known lines were found to be doublets. It is found that presently available theory does not explain the results adequately.

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