Temperature dependence measurements and performance analyses of high-efficiency interdigitated back-contact, passivated emitter and rear cell, and silicon heterojunction photovoltaic modules

Abstract

The temperature dependences of monocrystalline silicon (mono-Si), interdigitated back-contact (IBC), passivated emitter and rear cell (PERC), silicon heterojunction (SHJ), and multicrystalline silicon (multi-Si) photovoltaic (PV) modules are estimated. Their characteristics such as temperature coefficients (TCs) for the maximum power (Pmax), open-circuit voltage (Voc), and efficiency are measured. IBC, PERC, SHJ, mono-Si, and multi-Si exhibit TCs at 25 °C of Pmax and efficiency of −0.378, −0.404 to −0.373, −0.279, −0.432 to −0.415, and −0.516%/°C, respectively. IBC, PERC, SHJ, mono-Si, and multi-Si exhibit TCs at 25 °C of Voc of −0.267, −0.269 to −0.263, −0.218, −0.312 to −0.306, and −0.334%/°C, respectively. Thus, IBC, PERC, and SHJ show weaker temperature dependences than mono-Si and multi-Si. The efficiencies of IBC, PERC, and SHJ at 25 °C are 19.00, 18.81 to 19.25, and 21.40%, whereas those of mono-Si and multi-Si are 15.84 to 17.26 and 15.54%, respectively. Thus, IBC, PERC, and SHJ are more efficient than mono-Si and multi-Si in the temperature range higher than 25 °C.