Abstract
We have investigated the effect of growth temperature on structural morphology and photoluminescence (PL) properties of as-synthesized gallium oxide (Ga2O3) nanostructures. The products consisted of Ga2O3 nanobelts and nanosheets (i.e. wider nanobelts), which had monoclinic crystalline structures. The average width of structures grown at 1000 °C was relatively greater than those at 800 °C, revealing that higher temperature favored the formation of nanosheets. PL measurements of 800 °C- and 1000 °C-grown samples indicated that both samples exhibited a broad emission band peaked around the blue-light region, while only the 800 °C-grown sample showed a red peak.
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