Temperature characteristics of Ge/ZnS one-dimension photonic crystal for infrared camouflage

Abstract

In this paper, we investigate the temperature characteristics of Ge/ZnS one-dimension photonic crystal film for infrared camouflage, which is demonstrated low infrared emissivity at room temperature. The prepared film exhibits infrared camouflage capability with variable temperatures up to 400 °C. The infrared emissivity is 0.091 for 3–5 μm and 0.128 for 8–14 μm respectively at 400 °C. The thermal images also indicate the reduction of thermal radiation with the radiation temperature of 112.3 °C, while the real object temperature is 400 °C. This work demonstrates the infrared camouflage performance of Ge/ZnS one-dimension photonic crystal at variable temperatures. • We proposed an infrared camouflage structure for both 3–5 μm and 8–14 μm based on Ge/ZnS one-dimension photonic crystal. • The structure exhibits ideal dual-band infrared low emissivity characteristic up to 400 °C with temperature insensitivity. • The thermal radiation measurements indicate that the structure can meet the requirements of high-temperature infrared camouflage.