Abstract
Graphene on a ferroelectric can be a promising candidate to create advanced field effect transistors, modulators, and electrical transducers. Recently, we have shown that alternating “up” and “down” piezoelectric displacement of the ferroelectric domain surfaces can lead to the increase in graphene channel conductance at room temperature because of the partial separation of the graphene channel from the ferroelectric substrate. The change in graphene conductance caused by the piezoelectric effect requires systematic studies of ambient conditions impact on its manifestations. This theoretical work studies the temperature behavior of the graphene conductance changes induced by piezoelectric effect in a ferroelectric substrate with the domain structure. We revealed the possibility of increasing up to 100 times the conductance of the graphene channel on the ferroelectric substrate by changing the ambient temperature for a given gate voltage and channel length. The obtained results can open the way towards advanced applications of graphene on ferroelectric in piezo-resistive memories operating in a wide temperature range.
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