Abstract
In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1×1016–1×1017cm−2) of carbon and nitrogen with 150keV. The implantation temperatures were RT, 500°C and 1000°C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1×1017cm−2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500°C and 1000°C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.
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