Abstract
The temperature behavior of the high-frequency conductivity of surface electron channels in Schottky diodes based on high-resistivity p-type Si containing near-surface, oxidation-induced stacking faults is studied. It is shown that the reversible temperature-induced changes in the surface band bending and the work function of Si have a stepwise character in the temperature range 80–300 K. It is concluded that the surface concentration of free electrons increases during cooling from 180 to 80 K at temperatures which are characteristic of the ordering of water dipoles. These effects are associated with structuring of the water adsorbed on the Si-SiO2 interface and with the ordered orientation of the water dipoles on the surface in response to the loss of their rotational mobility.
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