Temperature annealing of radiation defects in xCu2Se-(1 − x)As2Se3 glasses: Dependence on composition

Abstract

The temperature annealing of radiation defects (RDs), which are broken bonds of network atoms, has been studied for a number of glasses of quasi-binary system xCu2Se-(1 − x)As2Se3 γ-irradiated at 77 K. The density distributions of localized states caused by defects have been determined based on the temperature dependences of the relative intensity I(T)/I(77) of the EPR spectrum of RDs and according to the energy of the thermal release of D(E); and it was found that their shape is close to Gaussian. There is a significant shift in the curves of I(T)/I(77) to lower temperatures with increasing Cu content in the network. In glasses with copper, the width of D(E), and the density of localized states increase with increasing x. It is assumed that the dependence of E m (x) (E m —energy, which corresponds to the maximum of the distribution of D(E)), correlates with the change in the negative effective interelectron correlation energy U eff on x. In As2Se3 glasses, in the temperature range of 77 to ∼175 K, values of I(T)/I(77) > 1 are observed, which was explained by the appearance of thermally induced defects.