Temperature and total ionizing dose effects of SiC MOSFET and their synergistic characteristics

Abstract

In light of the extreme environmental conditions of temperature and radiation faced by silicon carbide Metal–Oxide-Semiconductor Field-Effect Transistor (SiC MOSFETs) in aerospace electronic systems, the damage characteristics induced by high-temperature stress and Total Ionizing Dose (TID) radiation were compared. Moreover, the synergistic effect of temperature stress and TID on the performance of SiC MOSFETs was studied. The impact of temperature stress and radiation on threshold voltage and static power current is consistent; However, the degradation trend of on-resistance is opposite. The research shows that after temperature stress removal, the change in device performance parameters can be recovered. The total ionizing dose radiation can cause permanent damage to the device; In the environment of temperature stress and radiation, the increase of temperature can weaken or restrain part of radiation damage.