Abstract
Taking into account the effects of lattice vibrations and surface electrical field on carrier mobility, a unified formalism is developed to calculate the electrical parameters of silicon VV-MOSFETs. These parameters, including conductance and saturation drain current, are measured at varying temperatures and under strong surface fields. The experimental results deviate from the values estimated with the previous theories, but they are in good agreement with our calculations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
