Abstract

The extrinsic energy states and the recombination mechanism in theTl4Se3S chain crystals are being investigated by means of electrical and photoelectricalmeasurements for the first time. The electrical resistivity is observed to decreaseexponentially with increasing temperature. The analysis of this dependencerevealed three impurity levels located at 280, 68 and 48 meV. The photocurrent isobserved to increase as temperature decreases down to a minimum temperatureTm = 200 K.Below this temperature the photocurrent decreases upon temperature lowering. Two photoconductivityactivation energies of 10 and 100 meV were determined for the temperature ranges below and aboveTm, respectively. Thephotocurrent (Iph) versusillumination intensity (F) dependence follows the law. The value of γ decreases from ∼1.0 at300 K to ∼0.34 at 160 K. Thechange in the value of γ with temperature is attributed to the exchange of roles between the monomolecularrecombination at the surface near room temperature and trapping centers in the crystal,which become dominant as temperature decreases.

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