Abstract
The fabrication of Metal-DNA-Metal (MDM) structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25–55 °C) and magnetic fields (0–1200 mT) on the current-voltage (I-V) features of Au-DNA-Au (GDG) structures with an optimum gap of 10 μm is reported. The I-V characteristics acquired in the presence and absence of magnetic fields demonstrated the semiconducting diode nature of DNA in GDG structures with high temperature sensitivity. The saturation current in the absence of magnetic field was found to increase sharply with the increase of temperature up to 45 °C and decrease rapidly thereafter. This increase was attributed to the temperature-assisted conversion of double bonds into single bond in DNA structures. Furthermore, the potential barrier height and Richardson constant for all the structures increased steadily with the increase of external magnetic field irrespective of temperature variations. Our observation on magnetic field and temperature sensitivity of I-V response in GDG sandwiches may contribute towards the development of DNA-based magnetic sensors.
Highlights
I-V Features of Gold-DNA-Gold StructureNadia Mahmoudi Khatir 1,*, Zulkurnain Abdul-Malek 1,†,* and Seyedeh Maryam Banihashemian 2,†
The tunable electrical and magnetic properties of biomaterials have become attractive due to their usefulness in the development of efficient miniaturized electronic devices [1,2]
The sample is placed in a cryostat under the influence of an external magnetic field generated by an electromagnet and connected to the semiconductor analyzer (SA) via thermal controller (TC)
Summary
Nadia Mahmoudi Khatir 1,*, Zulkurnain Abdul-Malek 1,†,* and Seyedeh Maryam Banihashemian 2,†. Received: 13 September 2014; in revised form: October 2014 / Accepted: October 2014 /
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