Abstract
The ZrN sputtered films fabricated with various substrate temperatures and nitrogen partial pressures were devided into two groups by the ratio of the resistance at helium and room temperatures. We found a clear boundary and remarkable differences both in the temperature dependence of the resistance and in the magnetoresistance between the two groups. The characteristics of the ZrN films are considered to be due to Anderson localization, though the oscillatory behaviour in the magnetoresistance is not fully understood.
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