Abstract
ABSTRACTThe temperature and incident light intensity dependences of open circuit voltage for hetero-and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from -2.40 to -2.67 mV/°C as the illumination intensity is decreased from 150 to 7mW/cm2 This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values(l.6–3.0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1.5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
