Temperature and high fluence induced ripple rotation on Si(100) surface

Abstract

The topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20 °C–450 °C and at each temperature, the ion fluence is systematically varied in a wide range from 1 × 1018 cm−2 to 1 × 1020 cm−2. The ion sputtered surface morphologies are characterized by atomic force microscopy and high-resolution cross-sectional transmission electron microscopy. At room temperature, the ion sputtered surfaces show periodic ripple nanopatterns where their wave-vector remains parallel to ion beam projection for the entire fluence range. With an increase of substrate temperature, these patterns tend to demolish and reduce into randomly ordered mound-like structures around 350 °C. A further rise in temperature above 400 °C leads orthogonally rotated ripples beyond fluence 5 × 1019 cm−2. All the results are discussed combining the theoretical framework of linear, non-linear and recently developed mass redistribution continuum models of pattern formation by IBS. These results have technological importance regarding the control over ion-induced pattern formation, as well providing useful information for further progress in the theoretical field.