Abstract
Secondary electron emission yield from the surface of SiC ceramics induced by Xe17+ ions has been measured as a function of target temperature and incident energy. In the temperature range of 463–659 K, the total yield gradually decreases with increasing target temperature. The decrease is about 57% for 3.2 MeV Xe17+ impact, and about 62% for 4.0 MeV Xe17+ impact, which is much larger than the decrease observed previously for ion impact at low charged states. The yield dependence on the temperature is discussed in terms of work function, because both kinetic electron emission and potential electron emission are influenced by work function. In addition, our experimental data show that the total electron yield gradually increases with the kinetic energy of projectile, when the target is at a constant temperature higher than room temperature. This result can be explained by electronic stopping power which plays an important role in kinetic electron emission.
Highlights
The interaction of intense radiation and charged particles with solid targets has drawn considerable interest, from fundamental physics, and from many applications such as material modifications, X-rays source devices, radiation physics, chemistry, biology, plasma-wall interactions, and surface analysis as well[1,2,3,4,5,6,7,8,9,10,11]
Secondary electron emission yield from the surface of Silicon carbide (SiC) ceramics has been studied induced by Xe17+ ions
We found that increasing target temperatures can be employed to decrease the electron emission yield induced by highly charged ions
Summary
The interaction of intense radiation and charged particles with solid targets has drawn considerable interest, from fundamental physics, and from many applications such as material modifications, X-rays source devices, radiation physics, chemistry, biology, plasma-wall interactions, and surface analysis as well[1,2,3,4,5,6,7,8,9,10,11]. It is well known that electron emission yield depends on the charge state, energy, atom number of the projectile and the angle of incidence and so on[8,9,10,11]. We have done some work about the effects of recoiling atoms and charge state on electron emission yield γ12, 13. It was found that temperature effect on electron emission was not obvious, when projectiles with low charge state were employed. We investigate the temperature effect on electron emission yield induced by Xe17+ ions in the range of 463–659 K. The dependence of electron emission yield on the kinetic energy of projectile is studied at a constant target temperature, we have done some work about it at room temperature. Our result will be useful for the investigation of electron emission at temperatures above room temperature and the surface analysis of SiC ceramics
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