Abstract
We have calculated the effect of photon recycling, as a function of energy, temperature, and doping level in GaAs/AlGaAs double heterostructures. The calculations have been performed numerically using energy-dependent expressions for the absorption, emission, and refractive indices. Our calculations are compared to experiments, and we demonstrate the influence of the photon recycling on the photoluminescence line shape, both peak position and the high energy slope, total intensity, and decay time. The calculations show that the total emitted photoluminescence intensity should weakly increase with increasing temperature, if the internal quantum efficiency is 1. The experimentally observed intensity loss at high temperatures (700 K) is explained as due to a reduction of the internal quantum efficiency.
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